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28 July 1997 Development of a pellicle for use with an ArF excimer laser
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The ArF excimer laser keeps 6.4 eV (147 kcal/mol) light energy, which exceeds chemical boding energy for all organic materials. Therefore, in order to obtain light resistance with organic materials, a necessary condition for the membrane material is not to absorb the ArF excimer laser. We calculated the electronic energy levels of various organic molecule structures by using the molecular orbital method. Based on this calculation, we chose polymers which do not absorb the ArF excimer laser. One of these polymers is a fluoropolymer. We estimated this fluoropolymer's longevity by acceleration tests. These tests' results gave us an estimation that, with this fluoropolymer under ArF excimer laser lithography, more than 107 chips could be produced. Also, according to our experiment with the spectrometer, a little absorption of ArF excimer laser was found with the fluoropolymer. We presumed that it is possible to extend the longevity by removing the cause of this absorption.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeto Shigematsu, Hitomi Matsuzaki, Norio Nakayama, and H. Mase "Development of a pellicle for use with an ArF excimer laser", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997);

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