Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths

Stephane Davy; Michel Spajer; Daniel A. Courjon; Carlo Coluzza; R. Generossi; Antonio Cricenti; C. Barchesi; J. Almeida; G. Faini

doi:10.1117/12.281198

17 September 1997 Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths

Stephane Davy, Michel Spajer, Daniel A. Courjon, Carlo Coluzza, R. Generossi, Antonio Cricenti, C. Barchesi, J. Almeida, G. Faini

Author Affiliations +

Proceedings Volume 3098, Optical Inspection and Micromeasurements II; (1997) https://doi.org/10.1117/12.281198
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany

Abstract

This contribution presents an application of scanning near- field microscopy to the characterization of semi-conductors. We have studied the planar homogeneity of a Au/GaAs Schottky barrier using a local illumination by a nanosource with various wavelengths. One of the main results is the interface defaults revealed by the photocurrent mapping at (lambda) equals 1.33 micrometers .

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Stephane Davy, Michel Spajer, Daniel A. Courjon, Carlo Coluzza, R. Generossi, Antonio Cricenti, C. Barchesi, J. Almeida, and G. Faini "Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths", Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); https://doi.org/10.1117/12.281198

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