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22 September 1997 Field-effect-controlled photoconduction in PbS thin films
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Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997)
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel
A new structure is proposed for the PbS based photoresistors. This structure consists from a thin film of PbS (about 1 micrometer) chemically deposited on a dielectric layer (SiO2 or Si3N4 of about 2000 angstroms) grown, using different methods, on a single crystal Si wafer. The drain and the source contacts are the two gold electrodes evaporated on the surface of the PbS film. The resulting active area is of 6 by 6 mm2 and is subjected to an incident light with the wavelength in the domain 0.8 - 3 micrometer (at room temperature). The gate contact is the aluminum electrode evaporated on the back side of the Si substrate. Spectral distribution measurements were performed for different voltages applied on the gate electrode. It was found that the shape of the spectral distribution remains the same but the amplitude of the signal depends on the value and on the polarity of the applied voltage. An improvement of about 40% was obtained for the PbS photoconductive signal compared with the situation when the gate electrode is in air. The new structure offer the possibility to improve the photoconductive signal generated by the PbS film. This improvement is due to a field effect.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucian Pintilie, Ioana Pintilie, D. Petre, T. Botila, E. Pentia, and Cristiana E. A. Grigorescu "Field-effect-controlled photoconduction in PbS thin films", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997);

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