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22 September 1997 Long-wavelength infrared 128 x 128 GaAs/GaAlAs multiple quantum well focal plane array
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Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997) https://doi.org/10.1117/12.287842
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel
Abstract
We report on the fabrication and thermal imaging demonstration of a 128 by 128 focal plane array (FPA). The chip consists of an MBE grown GaAs/GaAlAs multiple quantum well (MQW) infrared detector matrix connected via indium columns to nodes of a mated readout multiplexer Si device. The electron intersubband to the continuum transition in the quantum well, created by the GaAs/GaAlAs conductive band discontinuity, is the mechanism responsible for the responsivity in the 6.5 micrometer - 8.5 micrometer spectral range. Pixels are 50 micrometer by 50 micrometer in size, spaced 60 micrometers apart. The pixel D* is 8 X 1010 cm(root)Hz/W which is the background limited performance (BLIP) at 77 K for a 180 degree field of view and background temperature of 300 K. The chip, packaged in a leadless chip carrier, was installed in variable temperature cryostat mounted with F/3 optics. The Si readout multiplexer having only 6 X 106 electrons (maximum) capacity of the integration well available to each pixel is the limiting factor in achieving a BLIP noise equivalent temperature difference (NETD). At an FPA operational temperature of 65 K, the measured NETD is 0.2 K.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shmuel I. Borenstain, Uriel Arad, I Lyubina, and A. Segal "Long-wavelength infrared 128 x 128 GaAs/GaAlAs multiple quantum well focal plane array", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.287842
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