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23 October 1997 Characterization of surface and bulk effects by variable-area diode test structures in HgCdTe technology: contribution of series and contact resistances
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Abstract
The contribution of the series resistance and contact resistance has been taken into account while working out the relation between zero bias resistance-area product and perimeter-to-area ratio of the diodes in variable area diode test structures. The effect of these resistances on the interpretation of the results from the variable area array experiment in HgCdTe test structures is discussed. The analysis of the experimental data to explain some of the past unexplained observations is presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vishnu Gopal "Characterization of surface and bulk effects by variable-area diode test structures in HgCdTe technology: contribution of series and contact resistances", Proc. SPIE 3122, Infrared Spaceborne Remote Sensing V, (23 October 1997); https://doi.org/10.1117/12.279004
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