Characterization of surface and bulk effects by variable-area diode test structures in HgCdTe technology: contribution of series and contact resistances

Vishnu Gopal

doi:10.1117/12.279004

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23 October 1997 Characterization of surface and bulk effects by variable-area diode test structures in HgCdTe technology: contribution of series and contact resistances

Vishnu Gopal

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Proceedings Volume 3122, Infrared Spaceborne Remote Sensing V; (1997) https://doi.org/10.1117/12.279004
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

The contribution of the series resistance and contact resistance has been taken into account while working out the relation between zero bias resistance-area product and perimeter-to-area ratio of the diodes in variable area diode test structures. The effect of these resistances on the interpretation of the results from the variable area array experiment in HgCdTe test structures is discussed. The analysis of the experimental data to explain some of the past unexplained observations is presented.

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Vishnu Gopal "Characterization of surface and bulk effects by variable-area diode test structures in HgCdTe technology: contribution of series and contact resistances", Proc. SPIE 3122, Infrared Spaceborne Remote Sensing V, (23 October 1997); https://doi.org/10.1117/12.279004

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