Paper
23 October 1997 Comparison of the performance of quantum well and conventional bulk infrared photodetectors
Antoni Rogalski, Robert Ciupa
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Abstract
Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. Two types of QWIPs are considered: GaAs/A1GaAs intersubband quantum well photoconductors and type II staggered InAs/InGaSb photodiodes. In comparative studies the HgCdTe photoconductors and photodiodes, PbSnTe photodiodes, Schottky barrier photoemissive detectors and doped silicon detectors are considered. HgCdTe photodiodes indicate better performance in comparison with GaAs/A1GaAs QWIPs operated in the range 35to 77 K. The cooling requirements for GaAs/A1GaAs QWIPs with cutoff wavelengths below 10 tm are less stringent in comparison with extrinsic detectors and Schottky barrier devices. The theoretically predicted performance of long wavelength InAs/GaInSb photodiodes are comparable with HgCdTe photodiodes. Keywords: infrared photodetectors, HgCdTe photodiodes, GaAs/AlGaAs photodetectors, quantum well InAs/GaInSb photodiodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni Rogalski and Robert Ciupa "Comparison of the performance of quantum well and conventional bulk infrared photodetectors", Proc. SPIE 3122, Infrared Spaceborne Remote Sensing V, (23 October 1997); https://doi.org/10.1117/12.292707
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Mercury cadmium telluride

Photodiodes

Quantum well infrared photodetectors

Photodetectors

Quantum wells

Stereolithography

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