Observation of quantum size effects in aluminum quantum wells on SiO2 and a-Si at 9.2 um

Ricardo Villagomez-Tamez; Ole Keller

doi:10.1117/12.279113

1 October 1997 Observation of quantum size effects in aluminum quantum wells on SiO₂ and a-Si at 9.2 μm

Proceedings Volume 3133, Optical Thin Films V: New Developments; (1997) https://doi.org/10.1117/12.279113
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Optical properties of ultrathin aluminum quantum wells deposited on glass (SiO₂) and crystalline silicon (a-Si) are studied at room temperature in the infrared region at 9.201 micrometers wavelength within two thicknesses range: d approximately 5 to 35 angstroms and 36 to 112 angstroms. All our thickness dependence reflectivity measurements were made by tuning a CO₂ laser to 9.201 micrometers for p-polarization and an angle of incidence of 7 degree(s). Our main contribution here is the reveled fine oscillatory behavior on a gradually increasing reflectivity spectra. These fine oscillation structure can be attributed to quantum size effects.

Citation Download Citation

Ricardo Villagomez-Tamez and Ole Keller "Observation of quantum size effects in aluminum quantum wells on SiO₂ and a-Si at 9.2 μm", Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); https://doi.org/10.1117/12.279113

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