Paper
26 September 1997 Plasma pinchlamp surface preparation
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Abstract
A high-pressure laser-guided gas-embedded plasma pinchlamp is described for the generation of intense UV radiation. It has been configured to optimize energy transfer from the storage PFN. The output energy peaks within the spectral range 150 - 250 nm with a pulsed power of 20 MW at 10 Hz. The device employs a working gas of argon at 3 AMAGAT and has a pulsewidth of 20 microseconds. The results of exploratory surface modification experiments with the pinchlamp are reported. These include the destruction of chemical warfare agent simulants, asbestos, petroleum, and insecticides on surfaces as well as semiconductor annealing. In addition it was determined that various aircraft coatings are able to be removed from aluminum and composite substrates. These coatings included primers, top coats, and anti-erosion materials. This pinchlamp technology potentially fills a performance gap in the hard ultraviolet between flashlamps and lasers. On the one hand it offers a peak power and brightness comparable to parameters customarily associated with laser technology. On the other hand it possesses the efficiency, simplicity, and scalability often encountered with conventional flashlamp systems.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John F. Asmus "Plasma pinchlamp surface preparation", Proc. SPIE 3140, Photometric Engineering of Sources and Systems, (26 September 1997); https://doi.org/10.1117/12.284088
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Cited by 1 scholarly publication.
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KEYWORDS
Plasma

Ultraviolet radiation

Argon

Annealing

Excimer lasers

Laser applications

Optical coatings

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