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1 November 1997 Influence of defects on photoluminescence in C60 crystals
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Abstract
Photoluminescence spectra of C60 crystals with high quality was measured before and after the mechanical deformation . New peak at 685 nm appeared after the deformation. The peak was observed only at temperatures lower than about 90 K, where its intensity decrease with increasing temperature. The temperature dependence of the peak intensity was correlated with that of main other peak at 735 nm, which would originate in intrinsic C60 crystals. From these result, the origin of the peak at 685 nm is discussed in the light of crystal defects, especially dislocations.
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Masaru Tachibana, Kazuki Nishimura, Takeshi Komatsu, Takaaki Sunakawa, and Kenichi Kojima "Influence of defects on photoluminescence in C60 crystals", Proc. SPIE 3142, Fullerenes and Photonics IV, (1 November 1997); https://doi.org/10.1117/12.279250
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