Paper
20 February 1998 Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy
Liqiu Q. Men, Huiyong Liu, Fusong S. Jiang, Fuxi Gan, Jielin Sun, Minqian Li
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300714
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
GeSb2Te4 phase change thin film was prepared by rf- magnetron sputtering method. Atomic force microscopy (AFM) was used to study the micro-structure of short-wavelength recorded spots. Microarea morphology images show that the recorded domain bulge after laser irradiation. With the increasing of writing pulse width, depression appears in the center of recorded spot. It is demonstrated that AFM is a very useful tool to evaluate the recorded spots and improve the performance of phase change media.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liqiu Q. Men, Huiyong Liu, Fusong S. Jiang, Fuxi Gan, Jielin Sun, and Minqian Li "Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300714
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KEYWORDS
Atomic force microscopy

Thin films

Laser irradiation

Sputter deposition

Tellurium

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