You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
20 February 1998Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film
The preparation method and short-wavelength optical storage properties of Ge-Te alloy phase change thin film are reported. The film was prepared by rf-sputtering technology. The deposited films were amorphous. The crystallization temperature was 190 degrees Celsius. The optical spectrum measurements showed that the reflectivity of the crystalline state film was rather high -- about 50% at 780 nm, which may be suitable for CD-E storage medium. A static optical recording tester with a focused Argon laser beam (514.5 nm) irradiating on the films was used to evaluate the optical storage performance of the films. The results showed that a rather large reflectivity contrast (larger than 15%) can be obtained at low power beam.
The alert did not successfully save. Please try again later.
Huiyong Liu, Fusong S. Jiang, Liqiu Q. Men, Zhengxiu Fan, Fuxi Gan, "Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film," Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300711