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20 February 1998 Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300711
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
The preparation method and short-wavelength optical storage properties of Ge-Te alloy phase change thin film are reported. The film was prepared by rf-sputtering technology. The deposited films were amorphous. The crystallization temperature was 190 degrees Celsius. The optical spectrum measurements showed that the reflectivity of the crystalline state film was rather high -- about 50% at 780 nm, which may be suitable for CD-E storage medium. A static optical recording tester with a focused Argon laser beam (514.5 nm) irradiating on the films was used to evaluate the optical storage performance of the films. The results showed that a rather large reflectivity contrast (larger than 15%) can be obtained at low power beam.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huiyong Liu, Fusong S. Jiang, Liqiu Q. Men, Zhengxiu Fan, and Fuxi Gan "Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300711
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