Photoreflectance and photoluminescence of InGaAs/GaAs structures

Jan Misiewicz; Mariusz Ciorga; G. Sek; Leszek Bryja; D. Radziewicz; Ryszard Korbutowicz; Marek Panek; Marek J. Tlaczala

doi:10.1117/12.276209

13 June 1997 Photoreflectance and photoluminescence of InGaAs/GaAs structures

Jan Misiewicz, Mariusz Ciorga, G. Sek, Leszek Bryja, D. Radziewicz, Ryszard Korbutowicz, Marek Panek, Marek J. Tlaczala

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276209
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

InGaAs/GaAs quantum wells have been grown in MOCVD system equipped with horizontal Aixtron reactor. Photoreflectance spectra have shown, even at room temperature, sharp heavy and light holes excitonic transitions in quantum wells. The obtained splitting energies have been compared with values derived from theoretical considerations using envelope function model including lattice mismatch-related stress. Heavy and light holes transitions have been identified as excitonic transitions type I and type II, respectively. Photoluminescence measurements have been also done. For quantum wells, transitions between first heavy hole and first electron subbands have been observed. Additionally the temperature dependence of observed transitions have been performed.

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Jan Misiewicz, Mariusz Ciorga, G. Sek, Leszek Bryja, D. Radziewicz, Ryszard Korbutowicz, Marek Panek, and Marek J. Tlaczala "Photoreflectance and photoluminescence of InGaAs/GaAs structures", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276209

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