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13 June 1997 Preparation, morphology, and electrical properties of TiN1-xCx thin layers
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276203
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
The TiN1-xCx thin layers were obtained by CVD technique using a flow method from reactant gas mixture: TiCl4(g)-N2(g)-CCl4(g)-H2(g). The obtained thin layers were investigated using metalographic, SEM and TEM techniques. Phase composition and lattice parameters were determined by the x-ray method using Inel, Philips and Siemens diffractometers. It was found that the morphology of the thin layers depends strongly on the temperature and time of deposition, type of growth substrate and also the molar ratios N/Ti and C/Ti in the reactant gas mixtures. Mirror- like and fine-grained thin films were obtained at temperatures of the growth substrate T <EQ 1100 degrees C. TEM examinations of the microstructure of the TiN1-xCx thin layers deposited on polycrystalline and single crystal Cu plates were also carried out. Factors responsible for the presence of a high density of dislocations in the examined layers were found. From DC measurements of resistance R in the temperature range 300- 4.2 K the residual resistance ratio RRR, superconducting transition temperature Tc, transition width (Delta) Tc and temperature coefficient of resistivity TCR were obtained.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Wokulski "Preparation, morphology, and electrical properties of TiN1-xCx thin layers", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276203
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