Time-resolved spectroscopy of low-dimensional structures based on porous silicon

Zbigniew Lukasiak; Waclaw Bala; Andrzej Kowalczyk; Elzbieta Nossarzewska-Orlowska

doi:10.1117/12.276247

13 June 1997 Time-resolved spectroscopy of low-dimensional structures based on porous silicon

Zbigniew Lukasiak, Waclaw Bala, Andrzej Kowalczyk, Elzbieta Nossarzewska-Orlowska

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276247
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

Photoluminescence time resolved spectra (PL-TRS) and decay times measurements in microsecond range at room temperature on anodically etched boron-doped silicon are presented PL- TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. Decay curves of photoluminescence have a multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed model in which the multi-barrier structure is formed by silicon crystal surrounded by silicon quantum wires, oriented perpendicular to the sample surface with diameters in the range of 2 to 12 nm. The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.

Citation Download Citation

Zbigniew Lukasiak, Waclaw Bala, Andrzej Kowalczyk, and Elzbieta Nossarzewska-Orlowska "Time-resolved spectroscopy of low-dimensional structures based on porous silicon", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276247

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