Growth and properties of native oxides for IV-VI optoelectronic devices

Nicolas N. Berchenko; A. I. Vinnikova; Alexander Yu. Nikiforov; E. A. Tretyakova; S. V. Fadyeev

doi:10.1117/12.280467

26 August 1997 Growth and properties of native oxides for IV-VI optoelectronic devices

Nicolas N. Berchenko, A. I. Vinnikova, Alexander Yu. Nikiforov, E. A. Tretyakova, S. V. Fadyeev

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280467
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

On the samples of lead-tin telluride the possibilities of native oxides application in IV-VI photodiodes technology were shown. It is demonstrated that usage of a thin chemical oxide as an intermediatory layer between metal and semiconductor improves the Schottky barrier properties while anodic oxide passivation raises thermal and temporal stability as well as lowers the scattering of parameters from element to element in multi-element linear arrays.

Citation Download Citation

Nicolas N. Berchenko, A. I. Vinnikova, Alexander Yu. Nikiforov, E. A. Tretyakova, and S. V. Fadyeev "Growth and properties of native oxides for IV-VI optoelectronic devices", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280467

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