Hydrogen ion cut technology combined with low-temperature direct bonding

Robert W. Bower; Albert Li; Yong-Jian Chin

doi:10.1117/12.280579

18 August 1997 Hydrogen ion cut technology combined with low-temperature direct bonding

Robert W. Bower, Albert Li, Yong-Jian Chin

Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280579
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

In this work we have combined the hydrogen ion cut technology with low temperature direct bonding. Our work allows silicon on insulator (SOI) materials produced with process temperatures below 400 degrees C. Previous work with hydrogen ion cut and other methods of forming SOI have required temperatures greater than 1000 degrees C. The work in this paper thus creates the opportunity to use the hydrogen ion cut technique to create SOI with ow process temperatures.

Citation Download Citation

Robert W. Bower, Albert Li, and Yong-Jian Chin "Hydrogen ion cut technology combined with low-temperature direct bonding", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); https://doi.org/10.1117/12.280579

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