Paper
18 August 1997 Reversible low-temperature direct bonds for fabrication of three-dimensional microelectronic structures
Robert W. Bower, Albert Li
Author Affiliations +
Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280562
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
This paper describes the formation and application of reversible low temperature bonds for fabrication of 3D microelectronic structures. The basis of this reversible bond is a three-step low temperature bonding process. This tree-step process consists of 1) pressure, 2) pressure and temperature and 3) temperature. The first and second steps of this process create a uniform, void free, weak bond that can be easily severed. The third step consists of a long anneal at 200 degrees C that creates a bond of strength greater than 1000 ergs/cm2. The reversibility and reusability of a bond processed through the first and second step of the three-step process is investigated in this paper.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert W. Bower and Albert Li "Reversible low-temperature direct bonds for fabrication of three-dimensional microelectronic structures", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); https://doi.org/10.1117/12.280562
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KEYWORDS
Microelectronics

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