Paper
22 December 1997 Changes in absorption (lambda=500-860 nm) of cell monolayer under irradiation with semiconductor laser at 670 or 820 nm
Tiina I. Karu, Natalia I. Afanasyeva, Sergei F. Kolyakov, Ludmila V. Pyatibrat
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Abstract
The aim of these experiments was a direct measurement of changes in absorption of cellular monolayers under diode laser irradiation. First, a sensitive method for multichannel registration of absorption of a cell monolayer in range 500-8060 nm was developed. Second, absorption spectra of intact HeLa cells and those after irradiation the monolayer with light at 670 and 820 nm were recorded. Third, the comparison of the absorption spectra and action spectra was performed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tiina I. Karu, Natalia I. Afanasyeva, Sergei F. Kolyakov, and Ludmila V. Pyatibrat "Changes in absorption (lambda=500-860 nm) of cell monolayer under irradiation with semiconductor laser at 670 or 820 nm", Proc. SPIE 3198, Effects of Low-Power Light on Biological Systems, (22 December 1997); https://doi.org/10.1117/12.297985
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KEYWORDS
Absorption

Chromophores

Copper

Oxygen

Molecules

Semiconductor lasers

Transition metals

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