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27 August 1997 0.18-μm gate length CMOS devices with N+ polycide gate for 2.5-V application
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Abstract
Single N+ polycide gate CMOS process has been scaled to the sub-0.2 micrometer gate-length regime. Estimated worst-case hot-carrier effect was 7% degradation in N-IDSAT for 10 years of continuous operation at 2.8 V. Being a buried channel device, P-MOSFETs presents a trade-off between VT adjustment and CD margin. It was manifested by the gate-to-drain overlap which increases as VT becomes less negative with more channel implant doses. We found that the relationship between gate-to- drain overlap and PMOS VT was almost independent of the n-well doping and source/drain junction depth. This indicates that the buried channel of P-MOSFETs acts as an extension to the source/drain. For VT equals 0.5 V, gate-to-drain overlap was 0.04 micrometer, and the n-well doping was twice of p-well doping for the same gate length, in order to account for the shorter effective channel length.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeong Yeol Choi, Eric Zhang, and Chung Chyung Han "0.18-μm gate length CMOS devices with N+ polycide gate for 2.5-V application", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284595
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