Characteristics of BaxSr1-xTiO3 thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application

Bigang Min; Jaesung Sung Roh; J. Yan; Dim-Lee Kwong

doi:10.1117/12.284612

27 August 1997 Characteristics of Ba_xSr_1-xTiO₃ thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application

Bigang Min, Jaesung Sung Roh, J. Yan, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284612
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

The characteristics of BST thin films prepared on Pt/SiO₂/Si substrates by MOCVD were investigated. The films were deposited with various flow ratios and temperatures. The dielectric constant ((epsilon) _r) was found to initially increase with increasing Ba/(Ba+Sr) flow ratio, reach to the maximum value ((epsilon) _r equals 184) at the flow ratio of 0.3, and then rapidly decrease with further increasing the flow ratio. No crystalline BST peak was observed in the films deposited with lower flow ratio than 0.3, while secondary BaCO₃ peaks were observed in those with higher flow ratio. It indicates that why maximum (epsilon) _r was achieved in the films with intermediate flow ratio. The BaCO₃ phase was disappeared in the BST films with the increase of deposition temperature. A two-step deposition method was proposed to improve (epsilon) _r (equals195) as well as surface morphology. However, it degraded leakage current of the films due to increased grain boundary area. Post annealing in O₂ ambient could reduce the leakage current, although an excessive oxidation reduced (epsilon) _r.

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Bigang Min, Jaesung Sung Roh, J. Yan, and Dim-Lee Kwong "Characteristics of Ba_xSr_1-xTiO₃ thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284612

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