Improvement of edge leakage in PBL-isolated SOI NMOSFETs

David Burnett; Mitch Lien; Kelly Baker

doi:10.1117/12.284598

27 August 1997 Improvement of edge leakage in PBL-isolated SOI NMOSFETs

David Burnett, Mitch Lien, Kelly Baker

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284598
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

One of the major problems for SOI technologies with LOCOS- based isolation is the high subthreshold leakage current along the field edge of NMOS devices. Partially depleted SOI transistors with a modified poly-buffered LOCOS isolation show a high off-leakage for devices with a silicon thickness of 900 angstroms and a gate oxide thickness of 105 angstroms due to the low threshold voltage of the parasitic edge device. The off-leakage is reduced by two orders of magnitude by increasing the doping of the edge device by using either a retrograde well or a lower temperature ILD0 reflow cycle. A further improvement in the off-leakage is observed by thinning the gate oxide thickness to 90 angstroms while increasing the channel doping to maintain a similar threshold voltage. The edge device is also shown to be very sensitive to the silicon film thickness. For the same channel implants and gate oxide thickness, an increase in the silicon thickness from 900 to 1100 angstroms eliminates the edge device resulting in excellent subthreshold characteristics.

Citation Download Citation

David Burnett, Mitch Lien, and Kelly Baker "Improvement of edge leakage in PBL-isolated SOI NMOSFETs", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284598

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