Low-threshold 0.6-um MOSFET for low-voltage rf applications

Andrej Litwin; Christian Nystroem; Karl Fagerholm

doi:10.1117/12.284592

27 August 1997 Low-threshold 0.6-μm MOSFET for low-voltage rf applications

Andrej Litwin, Christian Nystroem, Karl Fagerholm

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284592
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Results are reported on the high-frequency characteristics of low threshold MOSFET in an LNA (low noise amplifier) for 900 MHz applications. It is shown that an excellent noise figure N_F of 1.2 dB, together with good input related IP₃ equals 11 dBm and power gain A_p equals 13 dB, can be obtained in a 3.3 V CMOS 0.6 micrometer process. NF_min showed to be constant over a wide current range, making it possible to achieve optimum total LNA performance.

Citation Download Citation

Andrej Litwin, Christian Nystroem, and Karl Fagerholm "Low-threshold 0.6-μm MOSFET for low-voltage rf applications", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284592

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