Translator Disclaimer
Paper
11 September 1997 Statistical effects of plasma etch damage on hot-carrier degradation
Author Affiliations +
Abstract
During plasma etch steps, devices are exposed directly to plasma and charge collection/deposition onto aluminum or poly damage gate oxides. This damage results in higher subsequent hot-carrier degradation. Here, the statistical variations in waler-level hot-carrier degradations are investigated. Interface-trap formation is shown to be independent of antenna size across a wafer, while bulk oxide trapping center density is found to be highly dependent on the antenna size and type.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bharat L. Bhuva, Vijay Janapaty, N. Bui, and Sherra E. Kerns "Statistical effects of plasma etch damage on hot-carrier degradation", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284696
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top