Paper
5 September 1997 Influence of processes and selective bonding technology
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Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284488
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
The influences of surface characteristics, including adsorptive states led by different chemical treatments and surface roughness, on direct bonding between dissimilar CVD materials were investigated. The bonding procedures were carried out at temperature lower than 400 degrees Celsius. In this temperature range, LPCVD poly-silicon, PECVD oxide, and LPCVD silicon-nitride showed highly process dependent bonding behaviors, i.e., bondable or not bondable to another material under certain experimental conditions. Based on these facts, a selective bonding conception for Si-based CVD material is proposed and applied to fabricate new fluid structures and devices.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiwei Jiao, Axel Berthold, Michael J. Vellekoop, and Patrick J. French "Influence of processes and selective bonding technology", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284488
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Cited by 2 scholarly publications.
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KEYWORDS
Chemical vapor deposition

Low pressure chemical vapor deposition

Oxides

Plasma enhanced chemical vapor deposition

Silicon

Surface roughness

Temperature metrology

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