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15 September 1982 AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934270
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
AlxGa1-xAs/GaAs multiple quantum well (MQW) heterojunction structures have been grown by molecular beam epitaxy. Photopumped structures having quantum well sizes as low as 28 Å have shown 300 K and cw performance. MQW's with 28 Å well sizes grown at a substrate temperature of 720°C resulted in an equivalent current density of 2.3 kA/cm2 at a wavelength of about 7,270 Å.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Morkoc, N. Holonyak Jr., T. J. Drummond, M. D. Camras, and R. Fischer "AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934270
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