Comparison of line shortening assessed by aerial image and wafer measurements

Wolfram Ziegler; Rainer Pforr; Joerg Thiele; Wilhelm Maurer

doi:10.1117/12.301203

12 February 1997 Comparison of line shortening assessed by aerial image and wafer measurements

Wolfram Ziegler, Rainer Pforr, Joerg Thiele, Wilhelm Maurer

Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.301203
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

Increasing number of patterns per area and decreasing linewidth demand enhancement technologies for optical lithography. OPC, the correction of systematic non-linearity in the pattern transfer process by correction of design data is one possibility to tighten process control and to increase the lifetime of existing lithographic equipment. The two most prominent proximity effects to be corrected by OPC are CD variation and line shortening. Line shortening measured on a wafer is up to 2 times larger than full resist simulation results. Therefore, the influence of mask geometry to line shortening is a key item to parameterize lithography. The following paper discusses the effect of adding small serifs to line ends with 0.25 micrometer ground-rule design. For reticles produced on an ALTA 3000 with standard wet etch process, the corner rounding on them mask can be reduced by adding serifs of a certain size. The corner rounding was measured and the effect on line shortening on the wafer is determined. This was investigated by resist measurements on wafer, aerial image plus resist simulation and aerial image measurements on the AIMS microscope.

Citation Download Citation

Wolfram Ziegler, Rainer Pforr, Joerg Thiele, and Wilhelm Maurer "Comparison of line shortening assessed by aerial image and wafer measurements", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301203

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