Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing

Yoo-Hyon Kim; Byung-Cheol Cha; Hoong-Joo Lee; Jung-Min Sohn; Jeong-Taek Kong; Sang-Hoon Lee

doi:10.1117/12.301207

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12 February 1997 Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing

Yoo-Hyon Kim, Byung-Cheol Cha, Hoong-Joo Lee, Jung-Min Sohn, Jeong-Taek Kong, Sang-Hoon Lee

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Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.301207
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

A three-dimensional electron-beam lithography simulator version 2.0 has been newly enhanced for the multiple exposure of the Gaussian round beam. Development model parameters of the poly(butene-1-sulfone) positive electron beam resist in the spin-spray type are extracted through the experiment and simulation. With these parameters, electron beam simulation is applied to the submicron photomask manufacturing. The Gaussian round beam with the spot size and the address size of 0.1 micrometer is exposed with the dose of 2 (mu) C/cm² at 10 keV on the 4000 angstrom resist/1000 angstrom chrome/glass substrate and the development time is 50 sec. With respect to the CD linearity of L/S, an isolated line and space pattern, the two-dimensional simulation results agree well to the measured data. The three dimensional simulation for a contact hole test pattern of gigabit DRAMs is demonstrated and compared with the SEM micrograph of the experimental profile. The results show that this simulation approach is highly practical to photomask manufacturing applications.

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Yoo-Hyon Kim, Byung-Cheol Cha, Hoong-Joo Lee, Jung-Min Sohn, Jeong-Taek Kong, and Sang-Hoon Lee "Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301207

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