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12 February 1997 Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing
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A three-dimensional electron-beam lithography simulator version 2.0 has been newly enhanced for the multiple exposure of the Gaussian round beam. Development model parameters of the poly(butene-1-sulfone) positive electron beam resist in the spin-spray type are extracted through the experiment and simulation. With these parameters, electron beam simulation is applied to the submicron photomask manufacturing. The Gaussian round beam with the spot size and the address size of 0.1 micrometer is exposed with the dose of 2 (mu) C/cm2 at 10 keV on the 4000 angstrom resist/1000 angstrom chrome/glass substrate and the development time is 50 sec. With respect to the CD linearity of L/S, an isolated line and space pattern, the two-dimensional simulation results agree well to the measured data. The three dimensional simulation for a contact hole test pattern of gigabit DRAMs is demonstrated and compared with the SEM micrograph of the experimental profile. The results show that this simulation approach is highly practical to photomask manufacturing applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoo-Hyon Kim, Byung-Cheol Cha, Hoong-Joo Lee, Jung-Min Sohn, Jeong-Taek Kong, and Sang-Hoon Lee "Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997);

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