Paper
14 November 1997 Photoluminescence and electroluminescence characteristics of CaSiN2:Eu phosphor
Soon Seok Lee, Sungkyoo Lim, Sey-Shing Sun, John F. Wager
Author Affiliations +
Proceedings Volume 3241, Smart Materials, Structures, and Integrated Systems; (1997) https://doi.org/10.1117/12.293532
Event: Far East and Pacific Rim Symposium on Smart Materials, Structures, and MEMS, 1997, Adelaide, Australia
Abstract
Photoluminescenc eand electroluminescence of CaSiN2:Eu materials were investigted to develop a new phosphor for thin film electroluminescence (TFEL) device applications. Ca3N2 and Si3N4 powders were mixed to form CaSiN2 hostmaterials and Eu was added as the luminescent center. The mixed powermatrials were cold pressed under the pressure of 1 Kg/cm2 to make pellets, and fired at 1400 degrees Celsius for 2 hours under N2H2 envrionemtn. Th ex-ry diffraction(CRD) patterns of synthesizd materals wer well matched with CaSiN2 of joint committee for powder diffraction standards (JCPDS) csrad. When illuminated by ultravilet rays, th enew phosphors emitted very bright red ligh of peak wav lenegth centered at 620 nm. Th TFEL devices with CaSiN2:Eu phosphor layser swre grown by sputter depositonof CaSiN2:Eu target. Red light emission was observed when the peak amplitude of the applied voltge exceeded 116 V.l The luminance was shown to increase sharply withth increase of the applied voltage. The maximum luminance was 1.62 Cd/m2 at the applied peak voltage of 276 V. The red emission from CaSiN2:Eu TFEL device seems to result from electronic transition of Eu3+ ions.The emission spectra of TFEl devices matchwell withth ephotoluminescence spectra of CaSiN2:Ey powders. The new devices structure and fabrication processes for the iimprovement of emission intenityof CaSiN2:Eu TFEl devices ar under investigation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soon Seok Lee, Sungkyoo Lim, Sey-Shing Sun, and John F. Wager "Photoluminescence and electroluminescence characteristics of CaSiN2:Eu phosphor", Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); https://doi.org/10.1117/12.293532
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Cited by 15 scholarly publications.
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KEYWORDS
Electroluminescence

Capacitance

Europium

Luminescence

Sputter deposition

Thin film devices

Interfaces

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