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14 November 1997 Design and analysis of surface-micromachined two-axis silicon yaw-rate sensor
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In this paper, the design and the fabrication of a two-axes polysilicon yaw rate sensor with four vibrating masses are presented. To confirm the first mode of the designed yaw rate sensor, ANSYS simulation was performed and the resonant frequency of 28.263kHz was obtained. Due to process variations, the fabricated structure may have different resonant frequencies for reference and detection vibrations. Therefore, a simple frequency tuning structure was utilized for frequency matching. To drive the designed structure at optimum condition, Q factor was chosen to be 1000 and the driving voltage was set to 26V for one set of masses and 35V for the other set of masses. With the selected driving condition, the reference vibration amplitude would result in about 10(Mu) m for all masses. Input angular rate of 90deg/sec would vibrate big masses and small masses with the amplitude of 0.17micrometers , respectively. In the fabrication of the designed yaw rate sensor, 6micrometers thick LPCVD polysilicon was used as structural layer over phosphosilica glass sacrificial layer. Polysilicon structural layer was doped with phosphorous diffused from PSG. The patterned structure was released by sublimation drying method using p- dichlorobenzene. The total area of the fabricated yaw rate sensor is about 1.9 X 1.4 mm2.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seungoh Han and James Jungho Pak "Design and analysis of surface-micromachined two-axis silicon yaw-rate sensor", Proc. SPIE 3242, Smart Electronics and MEMS, (14 November 1997);


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