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14 November 1997 Monolithic iMEMS design with CMOS/SOI microcontroller and intelligent pressure sensor
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Abstract
As the communication era comes in reality, SOC in microelectronics is not only an emerging issue for multiple applications, but the combination of sensor and the SOC, iMEMS, out of high density and low power micromachining technologies in semiconductor work has attracted many researchers for several years. For practical purposes, circular-shape SOI micro-cavity technology facilitates multiple sensors on very small chip size possibility, makes device easier to package than conventional sensor like pressure sensor and also diaphragm can be any shape, defining the diaphragm photolithographically and also provides very high over-pressure capability. This paper demonstrates the cross-functional result for stress analyses, for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures. Those results are also compared with the ones of circular-shape bulk-Si based sensor. It is observed that the double SOI structure shows the most feasible deflection and small stress at various ambient pressure. The SOI microcavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mike Myung-Ok Lee and Yang-Ho Moon "Monolithic iMEMS design with CMOS/SOI microcontroller and intelligent pressure sensor", Proc. SPIE 3242, Smart Electronics and MEMS, (14 November 1997); https://doi.org/10.1117/12.293576
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