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30 April 1998 Ultrafast carrier dynamics near a Si surface: a reflective transient grating study
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Abstract
Reflective transient grating experiments were conducted using two different experimental configurations to study carrier dynamics. Using an 800 nm pump and 400 nm probe, a signal attributed to bleaching was observed, and the carrier energy relaxation time was measured to be approximately 600 fs. Experiments were also conducted with a 400 nm pump and 800 nm pump. For this configuration, the observed TG signal decay was attributed to carrier diffusion and recombination.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theodore A. Sjodin, Hai-Lung Dai, and Hrvoje Petek "Ultrafast carrier dynamics near a Si surface: a reflective transient grating study", Proc. SPIE 3272, Laser Techniques for Surface Science III, (30 April 1998); https://doi.org/10.1117/12.307145
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