Ultrafast carrier dynamics near a Si surface: a reflective transient grating study

Theodore A. Sjodin; Hai-Lung Dai; Hrvoje Petek

doi:10.1117/12.307145

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30 April 1998 Ultrafast carrier dynamics near a Si surface: a reflective transient grating study

Theodore A. Sjodin, Hai-Lung Dai, Hrvoje Petek

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Proceedings Volume 3272, Laser Techniques for Surface Science III; (1998) https://doi.org/10.1117/12.307145
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Reflective transient grating experiments were conducted using two different experimental configurations to study carrier dynamics. Using an 800 nm pump and 400 nm probe, a signal attributed to bleaching was observed, and the carrier energy relaxation time was measured to be approximately 600 fs. Experiments were also conducted with a 400 nm pump and 800 nm pump. For this configuration, the observed TG signal decay was attributed to carrier diffusion and recombination.

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Theodore A. Sjodin, Hai-Lung Dai, and Hrvoje Petek "Ultrafast carrier dynamics near a Si surface: a reflective transient grating study", Proc. SPIE 3272, Laser Techniques for Surface Science III, (30 April 1998); https://doi.org/10.1117/12.307145

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