Structure/property relationships in pulsed-laser-deposited ferroelectric thin films for frequency-agile microwave electronics

James S. Horwitz; A. C. Carter; Wontae Chang; Jeffrey M. Pond; Steven W. Kirchoefer; Douglas B. Chrisey; J. Levy; C. Hubert

doi:10.1117/12.309522

3 June 1998 Structure/property relationships in pulsed-laser-deposited ferroelectric thin films for frequency-agile microwave electronics

James S. Horwitz, A. C. Carter, Wontae Chang, Jeffrey M. Pond, Steven W. Kirchoefer, Douglas B. Chrisey, J. Levy, C. Hubert

Author Affiliations +

Proceedings Volume 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III; (1998) https://doi.org/10.1117/12.309522
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Low loss ferroelectric thin films deposited by pulsed laser deposition (PLD) are currently being used to develop a new class of tunable microwave circuits based on the electric field dependence of the dielectric constant. Single phase, (100) oriented Ba_0.5Sr_0.5TiO₃ (BST) films have been deposited onto (100) LaAlO₃, SrTiO₃, and MgO substrates. Interdigitated capacitors have been used to measure the dielectric constant and dissipation factor of these films as a function of DC bias and temperature at 1 MHz and as a function of DC bias at 1 to 20 GHz at room temperature. A low phase noise voltage controlled oscillator is currently being developed for use at frequencies from 1 - 20 GHz. To achieve low phase noise in the oscillator will require the loss tangent in the ferroelectric to be <EQ 5 X 10^-3. Origins of the dielectric loss are being investigated using optical techniques. Optical imaging of the ferroelectric films using confocal scanning optical microscopy shows reproducible polarization fluctuations over sub-micrometer length scales for BST films deposited onto SrTiO₃ which are not observed for films deposited onto MgO. Dielectric loss in the ferroelectric film is reduced through a combination of post deposition processing and donor/acceptor doping of the films. The lowest dielectric loss measured at microwave frequencies (tan(delta) equals 0.01 at 1 - 10 GHz) has been in a post-deposition annealed Ba_0.5Sr_0.5TiO₃ film doped with approximately 1 - 2 atomic % Mn.

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James S. Horwitz, A. C. Carter, Wontae Chang, Jeffrey M. Pond, Steven W. Kirchoefer, Douglas B. Chrisey, J. Levy, and C. Hubert "Structure/property relationships in pulsed-laser-deposited ferroelectric thin films for frequency-agile microwave electronics", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); https://doi.org/10.1117/12.309522

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