8.5-um room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy

Steven Slivken; Manijeh Razeghi

doi:10.1117/12.298215

12 January 1998 8.5-μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy

Steven Slivken, Manijeh Razeghi

Proceedings Volume 3278, Integrated Optic Devices II; (1998) https://doi.org/10.1117/12.298215
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report room-temperature pulsed-mode operation of 8.5 micrometers quantum cascade lasers grown by gas-source molecular beam epitaxy. The theory necessary to understand the operation of the laser is presented and current problems are analyzed. Very good agreement is shown to exist between theoretical and experimental emission wavelengths. The high- temperature operation is achieved with 1 microsecond(s) pulses at a repetition rate of 200 Hz. Peak output power in these conditions is in excess of 700 mW per 2 facets at 79 K and 25 mW at 300 K. Threshold current as a function of temperature shows an exponential dependence with T₀ equals 188 K for a 1.5 mm cavity.

Citation Download Citation

Steven Slivken and Manijeh Razeghi "8.5-μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); https://doi.org/10.1117/12.298215

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