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12 January 1998 MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures
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Bandgap tailoring and lattice-matching in SiGeC/Si heterostructures has potential for improving the performance and capabilities of Si based optoelectronics. Although remarkable progress in the molecular beam epitaxy (MBE) of SiGeC/Si heterostructures has been achieved, important questions concerning growth kinetics and thermal stability are still not fully understood. One major obstacle during MBE growth of these heterostructures may be the high surface diffusivity of carbon, which leads to small fractions of substitutional carbon at temperatures necessary for device quality epitaxial growth. We report on the surface kinetic properties of Si0.992C0.008/Si and thermal stability of strained Si0.992C0.008/Si and strain compensated Si0.892Ge0.10C0.008/Si alloys were shown to be more stable then the binary Si0.992C0.008/Si heterostructure alloys.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael W. Dashiell, Leonid V. Kulik, Dmitry A. Hits, and James Kolodzey "MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998);

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