GaN-based LEDs grown by molecular beam epitaxy

Robert Averbeck; A. Graber; H. Tews; D. Bernklau; Ulrich Barnhoefer; Henning Riechert

doi:10.1117/12.304427

7 April 1998 GaN-based LEDs grown by molecular beam epitaxy

Robert Averbeck, A. Graber, H. Tews, D. Bernklau, Ulrich Barnhoefer, Henning Riechert

Proceedings Volume 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II; (1998) https://doi.org/10.1117/12.304427
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report on the growth of GaN, InGaN and GaN/InGaN/GaN pn- junctions grown on sapphire by RF-plasma assisted MBE. MBE allows us to grow high quality nitrides with growth rates around 1 micrometers /h at relatively low temperatures. Thereby p- type doping with Mg and the incorporation of In in InGaN are greatly facilitated. Device-typical n- and p-type doping levels yield room temperature mobilities of 220 cm²/Vs and 10 cm²/Vs, respectively. InGaN with In contents of more than 40 percent is readily achieved. LEDs fabricated from heterostructures with a 4 nm InGaN layer show bright blue or green electroluminescence depending on the In content. Various effects in the electroluminescence caused by fluctuations in the conduction and valence band will be discussed, the most striking one a reduction in linewidth with increasing temperature.

Citation Download Citation

Robert Averbeck, A. Graber, H. Tews, D. Bernklau, Ulrich Barnhoefer, and Henning Riechert "GaN-based LEDs grown by molecular beam epitaxy", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304427

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