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7 April 1998 Monolithic hemispherical microlenses fabricated by selective oxidation of AlGaAs
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Abstract
We have developed a new method for the fabrication of monolithic AlGaAs microlenses on the surface of GaAs/AlGaAs light emitting diodes by combing crystal growth, ion etching and steam oxidation with wet chemical removal of the oxide. Control over the precise processing parameters has resulted in the precise control over the shape, radius, position and smoothness of the microfabricated hemispheres. These microlenses can readily be used for the fabrication of highly efficient light-emitting diodes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong Xu, Chuan-Cheng Cheng, Reginald K. Lee, John D. O'Brien, Amnon Yariv, and Axel Scherer "Monolithic hemispherical microlenses fabricated by selective oxidation of AlGaAs", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304423
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