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7 April 1998 Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures
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Abstract
Very high efficiency GaAs light-emitting diodes are based on surface-textured thin film structures. The technique relies on surface texturing by 'natural lithography', where a monolayer of randomly positioned polystyrene spheres acts as a mask for etching a random diffraction grating. We present result of a systematic experimental study on the influence of the surface-texturing parameters on the efficiency of these LEDs. The study was performed on GaAs/AlGaAs structures optimized for photoluminescence and electroluminescence, respectively. It shows that the maximum enhancement of the light output occurs for spheres of 200 nm to 300 nm diameter, which must cover more than 50 percent of the surface. The optimum etching depth is approximately 160 nm. Using these conditions, an external quantum efficiency for MBE-grown GaAs light emitting diodes of 10 percent was achieved for a device of only 50 X 75 micrometers 2 in size.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reiner Windisch, Paul L. Heremans, Barundeb Dutta, S. Schoberth, Jan Genoe, Maarten Kuijk, Peter Kiesel, Gottfried H. Doehler, and Gustaaf Borghs "Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304414
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