Proton Damage In Laser Diodes And Light-Emitting Diodes (LEDs)

I. Arimura; C. E. Barnes

doi:10.1117/12.933889

23 July 1982 Proton Damage In Laser Diodes And Light-Emitting Diodes (LEDs)

I. Arimura, C. E. Barnes

Proceedings Volume 0328, Laser and Laser Systems Reliability; (1982) https://doi.org/10.1117/12.933889
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The effects of low energy proton irradiations (< 1.5 MeV) on GaAs CUT and pulsed laser diodes (RCA C30130 and Laser Diode Lab LD-60) operated at room temperature are reported in this study. A strong energy dependence is observed from 200 keV to 1 MeV which is the result of the nonuniform damage produced by protons. One potential complication is proton energy attenuation by surface materials (metallization, contacts, leads). A strong dependence on diode orientation is also observed---1.5 MeV protons incident parallel to the junc-tion plane and normal to the laser emission facet produce anywhere from a factor of ~ 5 to 50 times more damage than when incident normal to the broqd, currentinjecting face of the laser diode. Proton fluences as low as 10 to 10¹² p/cm² produced significant degradation in laser output power.

Citation Download Citation

I. Arimura and C. E. Barnes "Proton Damage In Laser Diodes And Light-Emitting Diodes (LEDs)", Proc. SPIE 0328, Laser and Laser Systems Reliability, (23 July 1982); https://doi.org/10.1117/12.933889

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