Carrier lifetime calculations and modulation response of intersubband semiconductor lasers

C. Y. L. Cheung; Keith Alan Shore

doi:10.1117/12.316691

7 July 1998 Carrier lifetime calculations and modulation response of intersubband semiconductor lasers

C. Y. L. Cheung, Keith Alan Shore

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316691
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A self-consistent rate equation analysis of the direct current modulation response is performed through a calculation of the relevant carrier and tunneling lifetimes for a prototype triple quantum well structure suitable for incorporation in intersubband lasers. Opportunities for accessing predicted THz modulation response capabilities in such devices are examined. The intersubband optical gain spectra of these devices are investigated.

Citation Download Citation

C. Y. L. Cheung and Keith Alan Shore "Carrier lifetime calculations and modulation response of intersubband semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316691

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