Paper
7 July 1998 Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials
Koshi Ando, Tsutomu Yamaguchi, Keiichi Koizumi, Yoshihiro Okuno, Tomoki Abe, Hirohumi Kasada, Akira Ishibashi, Kazushi Nakano, Shuji Nakamura
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Abstract
Microscopic deep defect characteristics of the blue laser materials in the II-VI and III-V wide-bandgap semiconductors have been studied from the view point of the device performance and degradation. The deep defect centers, monitored by transient capacitance spectroscopy technique, have revealed quite different properties in electrical activity, defect density and carrier injection enhanced generation of the defects for the two different wide-bandgap blue laser materials.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koshi Ando, Tsutomu Yamaguchi, Keiichi Koizumi, Yoshihiro Okuno, Tomoki Abe, Hirohumi Kasada, Akira Ishibashi, Kazushi Nakano, and Shuji Nakamura "Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316704
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KEYWORDS
Diffusion

Nitrogen

Binary data

Blue light emitting diodes

Doping

Gallium nitride

Signal detection

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