Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser

Yoshinori Hatanaka; Toru Aoki; Madan Niraula; Y. Aoki; Yoichiro Nakanishi

doi:10.1117/12.316725

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7 July 1998 Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser

Yoshinori Hatanaka, Toru Aoki, Madan Niraula, Y. Aoki, Yoichiro Nakanishi

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Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316725
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

p-type doping of wide band gap II-VI semiconductors is a key technology to form the ohmic contact with metal electrodes in device fabrications. Using an alkaline metal compound such as K₂S, Na₂Se or Na₂Te which contains dopant atoms, excimer laser doping experiments were carried out for ZnSe and CdTe. Influence of the electrical properties on this treatment was mainly measured by means of the Hall measurement. The resistivity of ZnSe drastically decreased from 10⁵ to 10^-2 Ohm cm and the value of hole carrier concentration increased up to 4.8 X 10¹⁹ cm^-3. For CdTe also resistivity decreased from 10⁵ to 10^-1 Ohm cm. Formation of p-type ohmic contact in ZnSe p-n diode was also investigated.

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Yoshinori Hatanaka, Toru Aoki, Madan Niraula, Y. Aoki, and Yoichiro Nakanishi "Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316725

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