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7 July 1998 Influence of high probe power on multiwave mixing characteristics of semiconductor lasers
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Abstract
Nearly degenerate four-wave mixing in above-threshold laser diodes with symmetric or asymmetric facet reflectivities, subject to strong probe injection power, is investigated theoretically, taking into account the effects of pump depletion, carrier diffusion, gain saturation, gain compression, total power dependence of the gain and coupling coefficients as well as the longitudinal dependence of the nonlinear interaction. It is shown that the pump depletion effect plays an important role for strong input probe power. The reflectivity efficiencies of probe and conjugate wave demonstrate significantly different behaviors for strong probe injection power case, and a greater than approximately 3 dB enhancement of reflectivity efficiencies can be achieved in an asymmetric laser diode, compared to a symmetric laser.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Tang and Keith Alan Shore "Influence of high probe power on multiwave mixing characteristics of semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316697
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