Nanoscale silicon for electroluminescent devices

Philippe M. Fauchet; Leonid Tsybeskov

doi:10.1117/12.316733

7 July 1998 Nanoscale silicon for electroluminescent devices

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316733
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Although porous silicon has received the most attention over the last 5 years, other structures containing Si nanocrystallites have recently been shown to emit strong luminescence at room temperature. This presentation reviews the state-of-the-art in the preparation and properties of silicon quantum dot structures, and their use in electroluminescent devices. The materials science and the structural, chemical, electrical, and optical properties of both porous silicon and recrystallized silicon superlattices are discussed. The fabrication of light-emitting devices consisting of these two types of nanoscale silicon materials is then described. Finally, the present and projected stability, efficiency, and speed of these LEDS is reviewed and their integration with silicon microelectronic driver circuits demonstrated.

Citation Download Citation

Philippe M. Fauchet and Leonid Tsybeskov "Nanoscale silicon for electroluminescent devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316733

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