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7 July 1998 Performance analysis of fully depleted optical thyristors using the finite difference method
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Abstract
The reverse full-depletion voltages (VRD's) of PnpN depleted optical thyristors (DOTs) are obtained as a function of semiconductor parameters by using the finite difference method. For the full-depletion, the DOT requires a reverse bias, which determine the clock voltage level. The required magnitude of clock pulse should be as low as possible for the fast operation and the integration with electronics. In this study, we define the condition for the full-depletion and calculate VRD's varying semiconductor parameters, such as layer thickness and doping concentration. As a result, VRD is found to be very sensitive to the device parameters. As the worst case, VRD is changed by 34% for 10% variation of the low doped center layer thickness.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeong-Ho Lee and Young-Wan Choi "Performance analysis of fully depleted optical thyristors using the finite difference method", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316741
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