Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi; Adam W. Saxler; Patrick Kung; Danielle Walker; Xiaolong Zhang; Adam Rybaltowski; Y. Xiao; Hyuk Jong Yi; Jacqueline E. Diaz

doi:10.1117/12.304463

7 April 1998 Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi, Adam W. Saxler, Patrick Kung, Danielle Walker, Xiaolong Zhang, Adam Rybaltowski, Y. Xiao, Hyuk Jong Yi, Jacqueline E. Diaz

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304463
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13 degrees and 20 degrees for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

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Manijeh Razeghi, Adam W. Saxler, Patrick Kung, Danielle Walker, Xiaolong Zhang, Adam Rybaltowski, Y. Xiao, Hyuk Jong Yi, and Jacqueline E. Diaz "Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304463

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