III-N-V: a novel material system for lasers with good high-temperature characteristics

Charles W. Tu; W. G. Bi; H. P. Xin; Yong Ma; Jianping Zhang; Liwei Wang; Seng Tiong Ho

doi:10.1117/12.304444

7 April 1998 III-N-V: a novel material system for lasers with good high-temperature characteristics

Charles W. Tu, W. G. Bi, H. P. Xin, Yong Ma, Jianping Zhang, Liwei Wang, Seng Tiong Ho

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304444
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 micrometer at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 degrees Celsius, which is about 120 degrees Celsius higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature T_o of the former is 97 K, also higher than that of the latter.

Citation Download Citation

Charles W. Tu, W. G. Bi, H. P. Xin, Yong Ma, Jianping Zhang, Liwei Wang, and Seng Tiong Ho "III-N-V: a novel material system for lasers with good high-temperature characteristics", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304444

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