Mid-infrared interband cascade emission in InAs/GaInSb/AlSb type-II heterostructures

Hui Chun Liu; Emmanuel Dupont; John P. McCaffrey; Margaret Buchanan; Dongxu Zhang; Rui Q. Yang; C.H. Thompson Lin; Stefan J. Murry; Shin Shem Pei

doi:10.1117/12.304456

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7 April 1998 Mid-infrared interband cascade emission in InAs/GaInSb/AlSb type-II heterostructures

Hui Chun Liu, Emmanuel Dupont, John P. McCaffrey, Margaret Buchanan, Dongxu Zhang, Rui Q. Yang, C.H. Thompson Lin, Stefan J. Murry, Shin Shem Pei

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Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304456
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

To investigate the cascade process, we study two sets of mid- infrared InAs/GaInSb/AlSb multiple quantum well electroluminescent devices. Each set has nominally the same device parameters, differing only by the number of periods. We find, as expected, that for the same driving current the larger the device period the more intense is the emission. We also find that the scaling is far from ideal. We correlate the deviation of the exact scaling with the variation of the wafer-to-wafer structural quality.

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Hui Chun Liu, Emmanuel Dupont, John P. McCaffrey, Margaret Buchanan, Dongxu Zhang, Rui Q. Yang, C.H. Thompson Lin, Stefan J. Murry, and Shin Shem Pei "Mid-infrared interband cascade emission in InAs/GaInSb/AlSb type-II heterostructures", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304456

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