Application of tunable diode laser spectroscopy in combustion, atmospheric, and material growth monitoring

Daniel B. Oh; Alan C. Stanton

doi:10.1117/12.307603

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4 May 1998 Application of tunable diode laser spectroscopy in combustion, atmospheric, and material growth monitoring

Daniel B. Oh, Alan C. Stanton

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Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307603
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The development of high power, single mode and continuously tunable diode lasers in the visible to near-infrared region, and antimonide diode lasers operating in the 2 - 3 micrometer region near room temperature, is opening measurement opportunities in wavelength regions hitherto inaccessible by diode lasers. The spectroscopic properties of antimonide-based diode lasers operating in the 2.2 - 2.3 micrometer region have been examined for application to high sensitivity monitoring of carbon monoxide and formaldehyde. In a second application, nonlinear- up-conversion of diode laser output in order to access strong electronic transitions of atoms and molecules in the UV wavelength region is described. A tunable 308 nm beam was generated by sum frequency mixing high power diode laser output with single frequency Ar^PLU laser output, and high sensitivity absorption and laser induced fluorescence detection of the hydroxyl radical was demonstrated. Finally, direct doubling of the near-infrared output from an external cavity diode laser/power amplifier module was used to generate a tunable, near-UV laser beam to demonstrate the feasibility of optical flux monitoring of Group III atomic beams in an MBE chamber by spatially resolved optical absorption/LIF detection.

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Daniel B. Oh and Alan C. Stanton "Application of tunable diode laser spectroscopy in combustion, atmospheric, and material growth monitoring", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307603

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