Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots

Venkatesh Narayanamurti

doi:10.1117/12.304476

8 April 1998 Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots

Venkatesh Narayanamurti

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304476
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The measurement of heterojunction band parameters and their spatial variation is of fundamental importance for the operation of heterostructure devices. Ballistic electron emission microscopy (BEEM) is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and non-destructive local characterization of buried semiconductor heterostructures with nm resolution. We will present several new and novel applications of BEEM for semiconductor heterostructure characterization.

Citation Download Citation

Venkatesh Narayanamurti "Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304476

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