Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)

Serguei An; W. R. Clark; M. Jamal Deen; Anthony S. Vetter; M. Svilans

doi:10.1117/12.304505

8 April 1998 Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)

Serguei An, W. R. Clark, M. Jamal Deen, Anthony S. Vetter, M. Svilans

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304505
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Multiplied shot nose and gain-voltage characteristics of separate absorption, grading, charge and multiplication avalanche photodiodes were measured at 25 degrees C in a gain range of 3 to 30. Low optical input powers and a small spot size were used in order to minimize gain saturation effects and gain non-uniformity within the spot. The InP multiplication layer thickness and charge sheet density were extracted from capacitance - voltage characteristics and confirmed by SIMS. Electron and hole impact ionization coefficients in InP were then extracted using gain-voltage characteristics and McIntyre's expressions. Possible deep level traps within the InP multiplication layer were characterized using temperature and frequency characteristics of capacitance - voltage measurements. Peripheral and active area capacitances were separated by studying devices with different active area diameters.

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Serguei An, W. R. Clark, M. Jamal Deen, Anthony S. Vetter, and M. Svilans "Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304505

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